Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition
DOI:
https://doi.org/10.6000/2369-3355.2015.02.02.1Keywords:
Diamond film, microwave plasma CVD, aluminum nitride, doping, silane, silicon-vacancy color center, photoluminescence, Raman spectroscopyAbstract
Microcrystalline diamond films doped with silicon have been grown on aluminum nitride substrates by a microwave plasma CVD. The doping has been performed via adding silane in various concentrations to CH4-H2 reaction gas mixture in course of the deposition process. The films produced at the substrate temperatures of 750 to 950°C have been characterized by SEM, AFM, Raman and photoluminescence (PL) spectroscopy to assess the effect of Si doping on the diamond structure. The doped films showed bright photoluminescence of silicon-vacancy (SiV) color centers at 738 nm wavelength as well as noticeable side band at 723 nm. The optimum doping condition (SiH4/CH4 = 0.6%), that maximize the SiV PL emission, was determined for the range of silane concentrations SiH4/CH4 (0.0 - 0.9%) explored. A further PL enhancement can be achieved by increase in the substrate temperature. The applied in situ doping from gas phase is shown to be an easy and effective method to incorporate Si in diamond in a controllable way.
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http://dx.doi.org/10.1016/j.optmat.2009.02.020
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http://dx.doi.org/10.1016/j.diamond.2009.12.009
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http://dx.doi.org/10.1088/0957-4484/25/4/045302
[29] Sovyk D, Ralchenko V, Komlenok M, et al. Fabrication of diamond microstubphotoemitters with strong photoluminescence of SiV color centers: bottom-up approach. Appl Phys A. 2014; 118(1): 17-21.
http://dx.doi.org/10.1007/s00339-014-8877-2
http://dx.doi.org/10.1088/0953-8984/21/36/364221
[2] Uhlmann E, Sammler F. CVD coated diamond tools for the machining of lightweight materials. Adv Mater Res 2014; 907: 63-73.
http://dx.doi.org/10.4028/www.scientific.net/AMR.907.63
[3] Silva FJG, Fernandes AJS, Costa FM, Teixeira V, Baptista APM, Pereira E. Tribological behaviour of CVD diamond films on steel substrates. Wear 2003; 255: 846-53.
http://dx.doi.org/10.1016/S0043-1648(03)00145-5
[4] Yang N, Ed. Novel Aspects of Diamond: From Growth to Applications. Berlin: Springer; 2015.
[5] Szunerits S, Nebel CE, Hamers RJ. Surface functionalization and biological applications of CVD diamond. MRS Bulletin 2014; 39: 517-24.
http://dx.doi.org/10.1557/mrs.2014.99
[6] Aharonovich I, Neu E. Diamond nanophotonics. Adv Opt Mater 2014; 2: 911-28.
http://dx.doi.org/10.1002/adom.201400189
[7] Prawer S, Aharonovich I. Quantum information processing with diamond: principles and applications. Elsevier; 2014. 367 p.
[8] Neu E, Arend C, Gross E, et al. Narrowband fluorescent nanodiamonds produced from chemical vapor deposition films. Appl Phys Lett 2011; 98: 243107.
http://dx.doi.org/10.1063/1.3599608
[9] Hui YY, Cheng C-L, Chang H-C. Nanodiamonds for optical bioimaging. J Phys D: Appl Phys 2010; 43: 374021.
http://dx.doi.org/10.1088/0022-3727/43/37/374021
[10] Wang L, Lei X, Shen B, Sun F, Zhang Z. Tribological properties and cutting performance of boron and silicon doped diamond films on Co-cemented tungsten carbide inserts. Diam Relat Mater 2013; 33: 54-62.
http://dx.doi.org/10.1016/j.diamond.2013.01.004
[11] Musale DV, Sainkar SR, Kshirsagar ST. Raman, photoluminescence and morphological studies of Si- and N-doped diamond films grown on Si(100) substrate by hot-filament chemical vapor deposition technique. Diam Relat Mater 2002; 11: 75-86.
http://dx.doi.org/10.1016/S0925-9635(01)00521-0
[12] Grudinkin SA, Feoktistov NA, Medvedev AV, et al. Luminescent isolated diamond particles with controllably embedded silicon-vacancy color centres. J Phys D: Appl Phys 2012; 45: 062001.
http://dx.doi.org/10.1088/0022-3727/45/6/062001
[13] Cui Y, Zhang J, Sun F, Zhang Z. Si-doped diamond films prepared by chemical vapour deposition. Trans Nonferrous Met Soc China 2013; 23: 2962-70.
http://dx.doi.org/10.1016/S1003-6326(13)62821-6
[14] Sedov VS, Ralchenko VG, Vlasov II, et al. Photoluminescence of Si-vacancy color centers in diamond films grown in microwave plasma in methane-hydrogen-silane mixtures. Bull Lebedev Phys Inst 2015; 41: 359-63.
http://dx.doi.org/10.3103/S1068335614120057
[15] Smolin AA, Ralchenko VG, Pimenov SM, Kononenko TV, Loubnin EN. Optical monitoring of nucleation and growth of diamond films. Appl Phys Lett 1993; 62: 3449-51.
http://dx.doi.org/10.1063/1.109045
[16] Vlasov II, Goovaerts E, Ralchenko VG, Konov VI, Khomich AV, Kanzyuba MV. Vibrational properties of nitrogen-doped ultrananocrystalline diamond films grown by microwave plasma CVD. Diam Relat Mater 2007; 16: 2074-7.
http://dx.doi.org/10.1016/j.diamond.2007.07.007
[17] Yim WM, Paff RJ. Thermal expansion of AlN, sapphire, and silicon. J Appl Phys 1974; 45: 1456-7.
http://dx.doi.org/10.1063/1.1663432
[18] Ager JW. Residual Stress in Diamond and Amorphous Carbon Films. Symposium I - Mechanical Behavior of Diamond and Other Forms of Carbon. 1995.
[19] Bolshakov A, Ralchenko V, Sedov V, et al. Photoluminescence of SiV centers in single crystal CVD diamond in situ doped with Si from silane. Phys Status Solidi A (2015);
[20] Sternschulte H, Thonke K, Sauer R, Münzinger PC, Michler P. 1.681-eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films. Phys Rev B 1994; 50(19): 14554-60.
http://dx.doi.org/10.1103/PhysRevB.50.14554
[21] Sedov V, Ralchenko V, Khomich AA, et al. Si-dopednano- and microcrystalline diamond films with controlled bright photoluminescence of silicon-vacancy color centers. Diam Relat Mater. 2015; 56: 23-8.
http://dx.doi.org/10.1016/j.diamond.2015.04.003
[22] Burns RC, Cvetkovic V, Dodge CN, et al. Growth-sector dependence of optical features in large synthetic diamonds. J Cryst Growth. 1990; 104(2): 257-79.
http://dx.doi.org/10.1016/0022-0248(90)90126-6
[23] Rogers LJ, Jahnke KD, Doherty MW, et al. Electronic structure of the negatively charged silicon-vacancy center in diamond. Phys Rev B. 2014; 89(23): 235101.
http://dx.doi.org/10.1103/PhysRevB.89.235101
[24] Turukhin AV, Liu C-H, Gorokhovsky AA, Alfano RR, Phillips W. Picosecond photoluminescence decay of Si-doped chemical-vapor-deposited diamond films. Phys Rev B. 1996; 54(23): 16448-51.
http://dx.doi.org/10.1103/PhysRevB.54.16448
[25] Davydov VA, Rakhmanina AV, Lyapin SG, et al. Production of nano- and microdiamonds with Si-V and N-V luminescent centers at high pressures in systems based on mixtures of hydrocarbon and fluorocarbon compounds. Jetp Lett. 2014; 99(10): 585-9.
http://dx.doi.org/10.1134/S002136401410004X
[26] Fabisiak K, Ba?a W, Paprocki K, Szreiber M, Uniszkiewicz C. Broad band photoluminescence studies of diamond layers grown by hot-filament CVD. Opt Mater. 2009; 31(12): 1873-6.
http://dx.doi.org/10.1016/j.optmat.2009.02.020
[27] Smith BR, Gruber D, Plakhotnik T. The effects of surface oxidation on luminescence of nano diamonds. Diam Relat Mater. 2010; 19(4): 314-8.
http://dx.doi.org/10.1016/j.diamond.2009.12.009
[28] Singh S, Thomas V, Martyshkin D, Kozlovskaya V, Kharlampieva E, Catledge SA. Spatially controlled fabrication of a bright fluorescent nanodiamond-array with enhanced far-red Si-V luminescence. Nanotechnology 2014; 25(4): 045302.
http://dx.doi.org/10.1088/0957-4484/25/4/045302
[29] Sovyk D, Ralchenko V, Komlenok M, et al. Fabrication of diamond microstubphotoemitters with strong photoluminescence of SiV color centers: bottom-up approach. Appl Phys A. 2014; 118(1): 17-21.
http://dx.doi.org/10.1007/s00339-014-8877-2
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Published
2021-07-13
How to Cite
Sedov, V., Khomich, A., Ralchenko, V., Martyanov, A., Savin, S., Poklonskaya, O., & Trofimov, N. (2021). Growth of Si-Doped Polycrystalline Diamond Films on AlN Substrates by Microwave Plasma Chemical Vapor Deposition. Journal of Coating Science and Technology, 2(2), 38–45. https://doi.org/10.6000/2369-3355.2015.02.02.1
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